Patterning method using top surface imaging process by silylation

摘要

PURPOSE: An uneven of line edge of pattern sides can be reduced by reducing the uneven of the line edge of a photoresist pattern generated when developing it a dry etching through the conventional TIPS process. CONSTITUTION: A step is to form an etch object film on a substrate. Then, a step is to deposit a photoresist at an upper portion of the etch object film. Thereafter, a step is to expose selectively a predetermined portion of the surface of the photoresist by executing the lower exposure by using a predetermined mask. A next step is to execute bake and simulation to the exposed photoresist. Thereafter, a step is to patterning the photoresist by an execution a dry etching. Then, a step is to etch the etch object layer as a mask the photoresist pattern. At the first step, a polymer is deposited to the unevenness portion by making a large amount of polymer generate and thereafter at the second step, the etching object layer is etched by the photoresist pattern as a mask.