Poly-Si TFT-LCD array substrate fabrication method using FALC process

摘要

invention FALC process for using a low temperature poly-Si TFT-LCD array substrate manufacturing method as in the related, and more particularly to a method that can minimize the crystallization time of the TFT channel region. Conventional crystallization method in the crystallization time, given the way that by performing the heat treatment yieoteuna applying an electric field directly to the source region and the drain region of the amorphous silicon thin film within each of the TFT array on a substrate and crystallizing the amorphous silicon thin film at the same time, mass production The minimization problem remained zero line results. The production method of the present invention is to solve this problem, by the direct electric field in parallel with the source region and the drain region during heat treatment for crystallization is applied to the common gate signal line connected to the gate electrode of each TFT is a voltage higher than a threshold voltage , to increase the strength of the current flowing through the channel region larger than if only the existing electric field was applied, which is the main feature is to minimize the crystallisation time of the TFT with the channel region.