Vertical Cavity Surface Emitting Laser Including Indium In The Active Region

摘要

The quantum well and barrier layers are related to achieve a long-wavelength VCSEL performance, for example, 1260 to nitrogen disposed for exemplary GaAs substrate or GaAs substrate in order to achieve the 1650㎚ range (N), aluminum (Al), antimony (Sb ) it may be grown to include phosphorus (P), and indium (in). According to the feature of the invention, the at least one quantum well (11) consisting of InGaAs; GaAsN the barrier layer (12) sandwiched between the at least one quantum well (11); And a vertical cavity surface including a GaAsN the pinning layer (13) sandwiched between said barrier layer (12) is a light emitting laser is described. The AlGaAs constrained layer sandwiched between the quantum well 11 GaAsN barrier layers 12 and the barrier layer (12) sandwiched between a 13 also may be provided in the InGaAs quantum well (11). At least one GaAsN pinning layer (13) sandwiched between the quantum well 11 of the AlGaAs barrier layers sandwiched between the 12 and the barrier layer (12) may also be provided in the InGaAs quantum well (11) is. The quantum well 11 may be up to a thickness of 50Å. The quantum well 11 may also be developed to a depth of at least 40meV. ; Vertical cavity surface emitting laser (VCSEL), a quantum well