Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrates emitting at 1.3 /spl mu/m

摘要

Pulsed lasing at 1.3 /spl mu/m via the exciton ground state is demonstrated for vertical cavity surface emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The dots lie within InGaAs quantum wells separated by GaAs barrier layers. The structures are grown on GaAs substrates and when fabricated include selectively oxidized AlO current apertures and AlO/GaAs distributed Bragg reflectors. Experimental devices operate pulsed at 20/spl deg/C with threshold currents below 2 mA and differential slope efficiencies of 40%.