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Nano-patterning method using Atomic Force Microscope based on Voltage Programming

机译:基于电压编程的原子力显微镜纳米构图方法

摘要

the present invention is an atomic microscope workforce (atomic force microscope: AFM) for using Nano-transfer method (nano- relates to a patterning method), without modifying the structure of the conventional AFM, potentiometer (using a potentiometer) The purpose is to provide a method for repeatedly, yet quickly implement complex two-dimensional or three-dimensional pattern. ; nano transfer method using an atomic microscope personnel of the present invention, dividing a two-dimensional or three-dimensional object to be transferred to the pixels (pixel), the step of determining the voltage being applied to each pixel by scanning (A), (A) is determined in pixels, resulting in the transition of the voltage data to the signal voltage being applied to the time programmed by the steps of (B) and, (B) applied to the AFM via a potentiometer to the programmed voltage pattern as a function of time in step and the step (C) to implement the image, (C) convert the image of the embossed pattern is implemented by an anodizing reaction as in step intaglio pattern or etching with hydrofluoric acid or phosphoric acid in order to implement a more pronounced embossed pattern (D ) a, it is possible to construct a more fine than the photoelectric law nanostructure according to the present invention.
机译:本发明是一种在不改变传统的AFM电位器(使用电位器)结构的情况下,采用纳米转移法(与图案化方法有关)的原子显微镜劳动力(原子力显微镜:AFM)。提供了一种方法,该方法可以反复但快速地实现复杂的二维或三维图案。 ;使用本发明的原子显微镜人员的纳米转移方法,将要转移到像素(像素)的二维或三维物体分开,通过扫描(A)确定施加到每个像素的电压的步骤, (A)以像素为单位确定,导致电压数据到信号电压的转换施加到通过(B)步骤编程的时间,并且(B)通过电位计施加到AFM到编程的电压模式作为步骤和步骤(C)中的时间的函数,以实现图像,(C)通过如步骤凹版图案中的阳极氧化反应或用氢氟酸或磷酸蚀刻来实现浮雕图案的图像的转换。如果实现更显着的压花图案(D)a,则可以构造比根据本发明的光电法纳米结构更精细的图案。

著录项

  • 公开/公告号KR100621790B1

    专利类型

  • 公开/公告日2006-09-14

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20040045942

  • 发明设计人 이종협;김영훈;최인희;

    申请日2004-06-21

  • 分类号G01N13/16;G02B21;

  • 国家 KR

  • 入库时间 2022-08-21 21:23:05

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