Dynamic dosage adaptation method in lithography projector, involves setting exposure amount for each light exposure area, based on difference between time set for exposing each exposure area and time set for stabilizing resist layer

摘要

A resist layer (14) is formed on the surface of a semiconductor wafer (12) and the wafer surface is divided into several light exposure areas (22). The exposure amount is set for each exposure area based on the difference between the time set for exposing each exposure area and the time set for stabilizing the resist layer. The exposure and stabilization processes are performed at respective times. An independent claim is also included for lithography projector.