首页> 外国专利> Application of a system of thin films with complex physical functions onto substrates by medium frequency pulsed magnetron pulverisation, notably in the fabrication of optical components

Application of a system of thin films with complex physical functions onto substrates by medium frequency pulsed magnetron pulverisation, notably in the fabrication of optical components

机译:通过中频脉冲磁控管粉碎将具有复杂物理功能的薄膜系统应用于基板,特别是在光学组件的制造中

摘要

A device for applying a system of thin films, with complex physical functions corresponding to a predefined conception, on a substrate by medium frequency pulsed magnetron pulverisation comprises : (A) a vacuum chamber (103) accommodating an installation for pulverisation by magnetron (105 having at least one target (108); (B) an installation (102) for introducing and extracting the substrate; (C) a first installation for the introduction of a gas vector (110); (D) a second installation for the introduction of gas (109) for introducing in a separately controlled manner at least two different reactive gases; (E) an installation for regulating, as a function of time, the ratio of the reactive gas mixture in the vacuum chamber as a function of the predefined conception of the system of thin films; (F) a measuring installation (116) for collecting a value of at least one magnitude characteristic of the pulverisation by medium frequency pulsed magnetron; (G) a regulation installation (117, 118) that compares the collected value with a first consigned value to deduce a first signal for regulating the quantity of reactive gas fed to the vacuum chamber, the ratio of the reactive gas mixture in the vacuum chamber may then be modified by the regulation installation. An independent claim is also included for the method of applying a system of thin films using this device.
机译:一种通过中频脉冲磁控管粉碎在基板上施加具有与预定概念相对应的复杂物理功能的薄膜系统的设备,该设备包括:(A)真空室(103),用于容纳磁控管进行粉碎的设备(105至少一个靶(108);(B)用于引入和提取衬底的设备(102);(C)用于引入气体矢量的第一设备(110);(D)用于引入气体载体的第二设备。气体(109),以单独控制的方式引入至少两种不同的反应性气体;(E)用于根据时间调节真空室中反应性气体混合物比例的功能,该装置根据预定概念进行调节薄膜系统;(F)测量设备(116),用于收集中频脉冲磁控管粉碎的至少一个量级特征值;(G)调节设备(117, 118)将收集的值与第一委托值进行比较以得出用于调节供给至真空室的反应气体的量的第一信号,然后可以通过调节装置来修改真空室中反应气体混合物的比例。还包括使用该装置施加薄膜系统的方法的独立权利要求。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号