首页> 外国专利> Manufacturing molecular memory fields involves depositing, structuring lower electrode(s)/conducting track(s) on substrate, depositing electrically active self-organized monolayer, bringing substrate into contact with conductive material

Manufacturing molecular memory fields involves depositing, structuring lower electrode(s)/conducting track(s) on substrate, depositing electrically active self-organized monolayer, bringing substrate into contact with conductive material

机译:制造分子存储领域涉及在基板上沉积,构造下部电极/导电轨,沉积电活性自组织单层膜,使基板与导电材料接触

摘要

The method involves depositing and structuring the lower electrode(s) and/or conducting track(s) on a substrate, depositing the layer of an electrically active self-organized monolayer of at least one organic connection essentially orthogonal to the lower electrode(s) and/or conducting track(s), bringing the substrate into contact with a conductive material so that a conductive layer forms a selective connection on the electrically active layer, whereby the conductive layer on the self-organized monolayer forms the upper electrode and/or conducting track.
机译:该方法包括在基板上沉积和构造下部电极和/或导电迹线,沉积基本上垂直于下部电极的至少一个有机连接的电活性自组织单层的层。和/或导电轨道,使基材与导电材料接触,以使导电层在电活性层上形成选择性连接,从而自组织单分子层上的导电层形成上电极和/或进行跟踪。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号