Buried conducting connection manufacturing method for e.g. silicon substrate, involves diffusing doping material in poly silicon filling in silicon substrate in contact surface area to form buried conducting connection in substrate

摘要

The method involves providing a storage capacitor in a silicon substrate (100). A poly silicon filling (102) in lower and upper faulty areas is separated from a negative doping layer (104) and the substrate by a memory dielectric layer and an insulator layer (105), respectively. A doping material in the filling is diffused in the substrate in a contact surface area to form a buried conducting connection (106) in the substrate. An independent claim is also included for a method of manufacturing a memory cell in a semiconductor substrate.