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Fabrication of flash memory device involves performing trench formation process and wall oxide film formation process separately depending on pattern density, and forming wall oxide films with different thicknesses
Fabrication of flash memory device involves performing trench formation process and wall oxide film formation process separately depending on pattern density, and forming wall oxide films with different thicknesses
A flash memory device is fabricated by performing a trench formation process and a wall oxide film formation process separately depending on a pattern density, and forming wall oxide films with different thicknesses. Fabrication of a flash memory device involves: (a) sequentially forming a tunnel oxide film (12), a polysilicon film (13), and a hard mask film (14) on a semiconductor substrate (11) in which a first region and a second region are defined; (b) etching the hard mask film, the polysilicon film, and the tunnel oxide film in the first region, and then etching the semiconductor substrate at a given depth to form a first trench; (c) forming a first wall oxide film (16) on the first trench; forming a first insulating film (17) on the entire surface to bury the first trench; (d) etching the hard mask film, the polysilicon film and the tunnel oxide film in the second region, and then etching the semiconductor substrate at a given depth to form a second trench; (e) forming a second wall oxide film (19) on the second trench; (f) forming a second insulating film (20) on the entire surface to bury the second trench; and (g) polishing the insulating films and then removing the hard mask film.
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