CBRAM memory cell comprises a metallic material incorporated in or deposited on a matrix-host material, and a memory cell having a memory switching mechanism based on the variation of the metallic material

摘要

CBRAM memory cell comprises a metallic material (10) incorporated in or deposited on a matrix-host material (7), and a memory cell (4) having a memory switching mechanism based on the variation of the metallic material. Independent claims are also included for: (a) Memory system or component containing the above CBRAM memory cell; and (b) Computer system containing the memory system and a control unit.