Associative memory cell with resistive memory elements

摘要

It is an associative memory cell is specified. In one embodiment, the associative memory cell first and second resistive memory elements, which in a first series circuit are connected with one another and between a first and a second potential value are connected, with the second potential value is smaller than the first potential value. In addition, contains the associative memory cell has a means for switching between states with different electrical resistances. The memory cell has a first and a second field effect transistor, wherein the first and second transistors drain - source - stretching and gate electrodes and the drain - source - stretching of the first and second transistors are connected in a second series connection and to at least one of first electrical lines are connected. The first electric conductor is connected to a potential level value - detector for sensing a potential difference is connected to the third potential value.