Associative memory cell with resistive memory elements

摘要

Magnetic associative memory cell with:a first resistive magnetic memory element (2a) and a second resistive magnetic memory element (2b), which in a first series circuit between a first voltage (vdd) and a second voltage (gnd) are connected;a switch for switching over of the first and second resistive magnetic memory elements, into states with different electrical resistances is suitable;a first as a p - channel - transistor configured transistor (4) and a second than n - channel - transistor configured transistor (3), wherein the first and second transistors drain - source - stretching and gate - electrodes (6, 5), which, via corresponding lines (7, 8) to the first series circuit of the resistive memory elements (2a, 2b) at a location between two resistive memory elements (2a, 2b) are connected, the drain - source - stretching of the first and second transistors are connected in a second series connection and at least at one of the first current lines (mlp, mln) are connected, the first current lines to a in comparison to the first voltage (vdd) and smaller in comparison to the second..