Device forming apparatus for fabricating a semiconductor device comprises reaction chamber, first processing gas supply pipe, four-way valve, second processing gas supply pipe and bypass, and gate valve

摘要

A device forming apparatus has reaction chamber (110) in which a substrate is processed to fabricate a semiconductor device; first processing gas supply pipe supplying first processing gas into reaction chamber; 4-way valve installed at first processing gas supply pipe; second processing gas supply pipe connected to second inlet of 4-way valve; bypass connected to second outlet of 4-way valve; and gate valve installed at the bypass. The device forming apparatus comprises reaction chamber in which the substrate is processed to fabricate semiconductor device; first processing gas supply pipe supplying first processing gas into the reaction chamber; 4-way valve having first inlet, second inlet, first outlet, and second outlet and being installed at the first processing gas supply pipe such that the first inlet and outlet are connected to the first processing gas supply pipe; second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; bypass connected to the second outlet of the 4-way valve; and gate valve installed at the bypass. Independent claims are also included for: (1) a method of controlling a valve of the inventive apparatus for fabricating semiconductor device, comprising closing the gate valve installed at the bypass and opening the 4-way valve while the second processing gas is supplied to the reaction chamber; and opening the gate valve and closing the 4-way valve while supply of the second processing gas to the reaction chamber is interrupted; and (2) a method of fabricating the semiconductor device using the inventive apparatus, comprising loading the substrate into the reaction chamber; attaching a source gas material to the substrate by supplying the source gas to the reaction chamber; purging a source gas material that is not attached to the substrate by supplying the purge gas to the reaction chamber; forming a first reaction product layer on the substrate by supplying the reactive gas to the reaction chamber to allow the reactive gas to react with the source gas material attached to the substrate; and purging the reactive gas that has not reacted with the source gas material by supplying the purge gas to the reaction chamber.