首页> 外国专利> process for the production of a multifunctional mehrlagen layer on a transparent kunststoffsubstrat and then produced multifunctional mehrlagenschicht

process for the production of a multifunctional mehrlagen layer on a transparent kunststoffsubstrat and then produced multifunctional mehrlagenschicht

机译:在透明的kunststoff基材上生产多功能美黑素层的方法,然后生产多功能美黑素

摘要

The invention relates to a process for producing a multifunctional multi-ply layer on a transparent plastic substrate and to a multifunctional multi-ply layer produced thereby. In the process, a multi-ply layer is constructed by a plasma-assisted method on a transparent plastics substrate (1) in an enclosed process by using a microwave plasma source to produce a plasma and continuously maintaining the plasma during the course of the process. A first adhesion-promoting organosilicon polymer layer (2) is subsequently deposited in the microwave plasma, and then cathode sputtering is used to deposit a first ITO layer (3), and a transparent layer of metal and/or of metal oxide and a second ITO layer (3). Finally, an organosilicon polymer layer (5) is deposited. The multifunctional multi-ply layer is composed of a first adhesion-promoting organosilicon polymer layer (2) with a thickness of from 50 to 300 nm, of a first ITO layer (3) with a thickness of from 50 from 300 nm, of at least one transparent layer with a thickness of from 10 to 30 nm of metal and/or of metal oxide, of a second ITO layer (3) with a thickness of from 50 to 300 nm, and of at least one final organosilicon polymer layer (5) with a thickness of from 300 nm to 6 000 nm.
机译:本发明涉及在透明塑料基材上生产多功能多层层的方法,以及由此生产的多功能多层层。在该方法中,在封闭的过程中,通过使用微波等离子体源产生等离子体并在该过程中连续保持等离子体,通过等离子体辅助方法在透明塑料基板(1)上构建多层。随后在微波等离子体中沉积第一促进粘合的有机硅聚合物层(2),然后使用阴极溅射沉积第一ITO层(3),以及金属和/或金属氧化物的透明层以及第二ITO层ITO层(3)。最后,沉积有机硅聚合物层(5)。多功能多层层由厚度为50-300nm的第一增粘有机硅聚合物层(2),厚度为50-300nm的第一ITO层(3)构成。至少一层金属和/或金属氧化物的厚度为10至30 nm的透明层,厚度为50至300 nm的第二ITO层(3)和至少一层最终的有机硅聚合物层( 5)具有300nm至6000nm的厚度。

著录项

  • 公开/公告号DE50108558D1

    专利类型

  • 公开/公告日2006-02-02

    原文格式PDF

  • 申请/专利权人 ROTH & RAU AG;

    申请/专利号DE20015008558T

  • 发明设计人 DITTRICH KARL-HEINZ;ROTH DIETMAR;

    申请日2001-06-26

  • 分类号C08J7;B32B9;B32B27;C23C14/06;C23C14/08;C23C14/20;C23C14/35;C23C16/30;C23C16/32;C23C16/40;C23C16/511;

  • 国家 DE

  • 入库时间 2022-08-21 21:19:33

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