Formation of insulating nanostructured materials by controlled growth on a semiconductor material for the fabrication of capacitance devices such as Dynamic Random Access Memory

摘要

The formation of dielectric material nanostructured above a semiconductor material consists of a cycle of molecular reactions and saturation of the surfaces : The formation of dielectric material nanostructured above a semiconductor material consists of a cycle of molecular reactions and saturation of the surfaces comprises the following successive and indissociable stages: (A) growth with a factor alpha 1 a quarter of a mono-layer MC0 of the quaternary compound containing the oxynitrides with a base of the isotopes of germanium, hafnium, lutetium and lanthanides; (B) growth with a factor alpha 2 of a mono-layer MC1 of the binary or ternary or quaternary compound containing the oxides and oxynitrides with a base of the isotopes of hafnium, lutetium and lanthanides; (C) growth with a factorbeta 1 of a quarter of a mono-layer MC2 of the binary or ternary or quaternary compound containing oxides and oxynitrides with a base of the isotopes of hafnium, lutetium, lanthanides, titanium and aluminium; (D) growth with a factor alpha 3 of a quarter of a mono-layer MC1 of the binary or ternary or quaternary compound containing the oxides and oxynitrides with a base of the isotopes of hafnium, lutetium and lanthanides; (E) growth with a factor beta 2 of a mono-layer of the binary or ternary or quaternary compound containing the oxides and oxynitrides with a base of the isotopes of hafnium, lutetium, lanthanides, titanium and aluminium; (F) growth with a factor delta 1 of a quarter of a mono-layer MC3 of the quaternary compound containing the oxynitrides with a base of the isotopes of silicon, germanium, hafnium, lutetium, lanthanides, titanium, tantalum, tungsten, ruthenium, rhenium, cobalt, molybdenum, nickel and aluminium.