THERMAL PROJECTION DEVELOPING METHOD OF TARGET BASED ON SILICON AND ZIRCONIUM

摘要

A process for producing a target by a thermal projection, in particular by the plasma route, said target comprising at least one compound based on atoms of different types chosen in particular from the constituents M belonging to the family (Zr, Mo, Ti, Nb, Ta, Hf, Cr) and silicon, characterized in that at least a fraction of said compound whose constituents are bonded by covalent and / or ionic and / or metallic bonds in a plasma propellant, said plasma thruster projecting the constituents of said compound on the target so as to obtain a deposit of said compound at a surface portion of said target.