VAPOR PHASE EPITAXIAL GROWTH DEVICE AND PROCESSING METHOD USING VAPOR PHASE EPITAXIAL GROWTH DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a vapor phase epitaxial growth device that can restrain particles occurring in a processing space from affecting processing without involving deterioration in processing efficiency, and a processing method using the vapor phase epitaxial growth device.;SOLUTION: The vapor phase epitaxial growth device is provided with a susceptor 3 including a placing face onto which a substrate 2 to be processed is placed and a reaction tube 32 which forms an inner space 6 for storing the substrate 2 to be processed so as to allow a gas flow to be formed in the inner space 6. The reaction tube 32 includes rotary plates 34, 35 having surfaces 34a, 35a facing the inner space 6. The rotary plates 34, 35 are operated so that the surfaces 34a, 35a are switched between a place, which is at least on the further downstream side of the gas flow than the substrate 2 to be processed and located near the susceptor 3, and the other places.;COPYRIGHT: (C)2007,JPO&INPIT