METHOD OF FORMING INTERLAYER INSULATION FILM, PRECURSOR SOLUTION FOR FORMING INTERLAYER INSULATION FILM, CVD MATERIAL FOR FORMING INTERLAYER INSULATION FILM, AND MATERIAL FOR FORMING SILOXANE OLIGOMER

摘要

PPROBLEM TO BE SOLVED: To provide a method of forming an interlayer insulation film which has a superior mechanical strength and has a low dielectric constant. PSOLUTION: In the method of forming the interlayer insulation film by plasma CVD, an organic siloxane compound including one or more silicon atoms, each including at least three units expressed by a general expression -O-Si(RSP1/SPRSP2/SP)-ORSP3/SP, where RSP1/SPand RSP2/SPare the same or different kinds and are either methyl groups, ethyl groups, or propyl groups and RSP3/SPis the same kind as or different kind from RSP1/SPand RSP2/SPand is either a methyl group, an ethyl group, a propyl group, or a phenyl group, is used as a material. PCOPYRIGHT: (C)2007,JPO&INPIT