METHOD OF FORMING INTERLAYER INSULATING FILM, PRECURSOR SOLUTION FOR FORMING OF INTERLAYER INSULATING FILM, CVD MATERIAL FOR FORMING OF INTERLAYER INSULATING FILM AND RAW MATERIAL FOR PRODUCTION OF SILOXANE OLIGOMER

摘要

In a method of forming an interlayer insulating film by plasma CVD, an organic siloxane compound including one or more silicon atoms each having at least three or more units each represented by a general formula, —O—Si(R¹R²)—OR³ (wherein R¹ and R² are the same as or different from each other and are a methyl group, an ethyl group or a propyl group, and R³ is the same as or different from R¹ and R² and is a methyl group, an ethyl group, a propyl group or a phenyl group) is used as a raw material.