MANUFACTURING METHOD OF P-TYPE SEMICONDUCTOR ZINC OXIDE FILM, AND PULSED LASER DEPOSITION METHOD USING TRANSPARENT SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a p-type semiconductor zinc oxide (ZnO) film and a manufacturing method of this film.;SOLUTION: A p-type ZnO material is deposited by using a pulsed laser deposition method (PLD). In this method, a pulsed laser beam is focused on a solid target comprising a mixture of a compound containing both Li and P with ZnO. By the high power density of the focused laser pulse, the material on the target surface is ablated. Then, plasma is formed, and this is deposited on the surface of the substrate. Moreover, there is described a pulsed laser deposition process using a transparent substrate including a pulsed laser source, a substrate that is transparent to the wavelength of the pulsed laser, and a multi-target system. The optical path of the pulsed laser is arranged in such a manner that the pulsed laser is incident from the back of the substrate to pass through the substrate and is focused on the target. By translating the substrate toward the target, the attachment of a micro pattern using the root of an ablation plume is permitted.;COPYRIGHT: (C)2008,JPO&INPIT