首页> 外国专利> SEMICONDUCTOR DEVICE, ELECTRO-OPTICAL DEVICE, PACKAGING STRUCTURE, METHOD FOR MANUFACTURING PROJECTION ELECTRODE, AND ELECTRONIC APPARATUS

SEMICONDUCTOR DEVICE, ELECTRO-OPTICAL DEVICE, PACKAGING STRUCTURE, METHOD FOR MANUFACTURING PROJECTION ELECTRODE, AND ELECTRONIC APPARATUS

机译:半导体器件,光电器件,包装结构,制造投射电极的方法和电子设备

摘要

PROBLEM TO BE SOLVED: To realize a good and stable conductive connection status by stable formation of the ideal microscopic concavo-convex shape of a projection electrode.;SOLUTION: The main feature of the semiconductor device 10 is that it is equipped with a projection electrode 10 which has a projection 11 composed of resin material formed on a substrate 1, grain 12 arranged on the projection 11, and conductive layer 13 with a concavo-convex surface formed on the foregoing projection 11 and grain 12 where the grain 12 is reflected. Since the grain 12 is arranged on the projection 11, a microscopic surface concavo-convex shape reflecting the grain 12 is formed on the surface of the conductive layer 13. Then, as the convex part of the surface concavo-convex shape breaks through the oxide film of an interconnect line at the time of mounting, the good and stable conductive connection status can be obtained.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:通过稳定地形成投影电极的理想的微观凹凸形状来实现良好且稳定的导电连接状态。解决方案:半导体器件10的主要特征在于,其配备有投影电极。参照图10,其具有由树脂材料构成的突起11,该突起11形成在基板1,形成在突起11上的颗粒12,以及形成在上述突起11上的具有凹凸表面的导电层13和反射颗粒12的颗粒12。由于晶粒12布置在突起11上,因此在导电层13的表面上形成反映晶粒12的微观表面凹凸形状。然后,随着表面凹凸形状的凸部穿透氧化物,安装时互连线的覆膜,可以获得良好且稳定的导电连接状态。;版权所有:(C)2007,JPO&INPIT

著录项

  • 公开/公告号JP2007067316A

    专利类型

  • 公开/公告日2007-03-15

    原文格式PDF

  • 申请/专利权人 SANYO EPSON IMAGING DEVICES CORP;

    申请/专利号JP20050254474

  • 发明设计人 KANEKO TAKESHI;

    申请日2005-09-02

  • 分类号H01L21/60;

  • 国家 JP

  • 入库时间 2022-08-21 21:14:03

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