首页> 外国专利> SILICON WET ETCHING PROCESS USING PARYLENE MASK AND METHOD FOR PRODUCING NOZZLE PLATE OF INK JET PRINTHEAD USING THIS PROCESS

SILICON WET ETCHING PROCESS USING PARYLENE MASK AND METHOD FOR PRODUCING NOZZLE PLATE OF INK JET PRINTHEAD USING THIS PROCESS

机译:利用亚芳基面膜的硅湿法蚀刻工艺以及利用该工艺制备喷墨头的喷嘴板的方法

摘要

PROBLEM TO BE SOLVED: To provide a silicon wet etching process using a parylene mask.;SOLUTION: The silicon wet etching process using a parylene mask comprises the steps of: forming a primary etching mask comprising parylene on a surface of a silicon substrate; forming a first element by subjecting the silicon substrate to a primary wet etching using the primary etching mask, forming a secondary etching mask comprising silicon oxide film on the surface of the silicon substrate; and forming a second element by subjecting the silicon substrate to a secondary wet etching using the secondary etching mask.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:提供一种使用聚对二甲苯掩模的硅湿法蚀刻工艺。解决方案:使用聚对二甲苯掩模的硅湿法蚀刻工艺包括以下步骤:在硅衬底的表面上形成包括聚对二甲苯的主蚀刻掩模;通过使用初级蚀刻掩模对硅衬底进行初次湿法蚀刻来形成第一元件,并在硅衬底的表面上形成包括氧化硅膜的次级蚀刻掩模;通过使用二次蚀刻掩模对硅衬底进行二次湿蚀刻来形成第二元素。版权所有:(C)2007,JPO&INPIT

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号