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FILM DEPOSITION METHOD OF BORON-CARBON NITRIDE AND BORON NITRIDE, AND FILM, SUBSTRATE AND DEVICE OBTAINED BY THE METHOD

机译:硼碳氮化物和硼氮化物的膜沉积方法,以及所获得的膜,基质和器件

摘要

PROBLEM TO BE SOLVED: To provide a flexible organic material substrate, a glass substrate or the like with boron-carbon nitride and boron nitride being film-deposited by performing the film deposition of boron-carbon nitride and boron nitride at the temperature of below 250°C at which a substrate formed of a flexible organic material, a glass-made substrate or the like can withstand.;SOLUTION: In the film deposition method of boron-carbon nitride, plasma is generated in a film deposition chamber to mainly excite nitrogen atoms, the excited nitrogen atoms are reacted with boron atoms and carbon atoms to perform the film deposition of boron-carbon nitride on a substrate, a film deposition promoting substance layer consisting of metal is formed on the substrate in advance. The film deposition promoting substance layer is formed of a substance containing any one of iron, titanium, nickel, platinum, chromium and cobalt.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:通过在低于250℃的温度下进行碳氮化硼和氮化硼的膜沉积,来提供一种柔性有机材料基板,玻璃基板等,其具有碳氮化硼和氮化硼被膜沉积。 ; C;由挠性有机材料形成的基板,玻璃制基板等可以承受的温度;解决方案:在碳氮化硼的薄膜沉积方法中,等离子体在薄膜沉积室中产生,主要激发氮原子中,被激发的氮原子与硼原子和碳原子反应以在基板上进行硼碳氮化物的膜沉积,在基板上预先形成由金属组成的膜沉积促进物质层。成膜促进物质层由包含铁,钛,镍,铂,铬和钴中的任何一种的物质形成。版权所有:(C)2007,日本特许厅&INPIT

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