The method of possessing the new microstructure which is controlled and forming the tantalum film and the tantalum film

摘要

The thin film tantalum film which possesses new microstructure is offered. The said film, has the microstructure of nano- crystal, the monocrystal and the amorphous etc. This kind of film has very satisfactory spread barrier quality, it is profitable in the microelectronics device. Pulsed laser precipitator method (PLD) and the molecular beam epitaxy (MBE) using precipitator method, it offers also the microelectronics device which includes method and this kind of film which form this kind of film.