POLISHING SLURRY, SURFACE TREATMENT METHOD OF GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYSTAL SUBSTRATE, GROUP III NITRIDE CRYSTAL SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE AND ITS FABRICATION PROCESS

摘要

PROBLEM TO BE SOLVED: To provide polishing slurry which can form a smooth surface with little potential flaw efficiently on a group III nitride crystal, and to provide a surface treatment method of the group III nitride crystal employing polishing slurry.;SOLUTION: Polishing slurry performing the chemical mechanical polishing of the surface of a group III nitride crystal contains abrasive grains having hardness not higher than that of the group III nitride crystal wherein the abrasive grains are secondary particles associated with primary particles, and the ratio d₂/d₁ of mean particle diameter d₂ of the secondary particles to mean particle diameter d₁ of the primary particles is 1.6 or larger.;COPYRIGHT: (C)2007,JPO&INPIT