HIGH OUTPUT RED SEMICONDUCTOR LASER

摘要

PROBLEM TO BE SOLVED: To provide a high output red semiconductor laser in which FFP variation is suppressed by decreasing the effective difference of refractive index appropriately in the lateral direction within an active layer while sustaining the band gap of a current block layer higher than that of the active layer.;SOLUTION: An n-AlGaInP clad layer 3, an AlGaInP light guide layer 4, an MQW active layer 5, an AlGaInP light guide layer 6, a p-AlGaInP first clad layer 7, an AlGaInP etching stop layer 8, an n-AlGaInP block layer 11, a p-AlGaInP second clad layer 9, a p-GaInP buffer layer 10, and a p-electrode 12 are formed on an inclining n-GaAs substrate 2, and an n-electrode 1 is formed on the back of the n-GaAs substrate 2. The MQW active layer 5 principally comprises GaInP, and the block layer 11 is composed of (Al_XGa_1-X)_0.5In_0.5P (0.7X1).;COPYRIGHT: (C)2007,JPO&INPIT