首页> 外国专利> ZINC OXIDE OPTICAL DEVICE, METHOD OF UTILIZING ZINC OXIDE OPTICAL DEVICE AND ZINC OXIDE SEMICONDUCTOR LASER

ZINC OXIDE OPTICAL DEVICE, METHOD OF UTILIZING ZINC OXIDE OPTICAL DEVICE AND ZINC OXIDE SEMICONDUCTOR LASER

机译:氧化锌光学器件,利用氧化锌光学器件的方法和氧化锌半导体激光器

摘要

PROBLEM TO BE SOLVED: To provide a method for easily forming a pn junction between a silicon substrate and a zinc oxide thin film at a low cost.;SOLUTION: In the zinc oxide optical device comprising a p type silicon substrate 1 provided with a conductive thin film 2 on one surface, an n type zinc oxide thin film 3 for which the pn junction is formed with the other surface of the p type silicon substrate 2 and a first light transmissive conductive thin film 4 formed on the other surface of the n type zinc oxide thin film 3, by laminating zinc oxide on the surface of the p type silicon substrate 1 by a laser ablation technique and annealing it thereafter, the pn junction is formed between the p type silicon substrate 1 and the n type zinc oxide thin film 3.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:提供一种以低成本容易地在硅基板和氧化锌薄膜之间形成pn结的方法。解决方案:在包括具有导电薄层的p型硅基板1的氧化锌光学器件中。膜2的一个表面上,在p型硅衬底2的另一个表面上形成pn结的n型氧化锌薄膜3,在n型的另一个表面上形成第一透光导电薄膜4氧化锌薄膜3,通过激光烧蚀技术将氧化锌层压在p型硅衬底1的表面上,然后对其进行退火,从而在p型硅衬底1与n型氧化锌薄膜之间形成pn结。 3 .;版权:(C)2007,日本特许厅&入籍

著录项

  • 公开/公告号JP2007173739A

    专利类型

  • 公开/公告日2007-07-05

    原文格式PDF

  • 申请/专利权人 TOKYO UNIV OF SCIENCE;

    申请/专利号JP20050372927

  • 发明设计人 CHO SHINI;

    申请日2005-12-26

  • 分类号H01L33/00;C23C14/08;H01L21/363;H01S5/327;

  • 国家 JP

  • 入库时间 2022-08-21 21:11:27

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