Production manner of the ferroelectric film and the ferroelectric film, production manner of the ferroelectric capacitor and the ferroelectric capacitor, being production manner of the ferroelectric film which consists of the structure where

摘要

PROBLEM TO BE SOLVED: To provide a novel ferroelectric film made of a material, which is not an oxide ferroelectric material or polyvinylidene fluoride-based organic ferroelectric material and a method of manufacturing the same, a ferroelectric capacitor comprising the ferroelectric film and a method of manufacturing the same, and a ferroelectric memory device comprising the ferroelectric capacitor and a method of manufacturing the same. SOLUTION: The method of manufacturing the ferroelectric film comprises a process (a) of forming a first region 50 having such a surface physicality as to deposit preferentially at least one of materials for a film 32 including the acceptor and a film 34 including the donor, and a second region 52 having a surface physicality which hardly allows the deposition of a material relative to the first region 50; and a process (b) of applying a material and then forming the film 32 including the acceptor or the film 34 including the donor or both of the films selectively in the first region 50.