首页> 外国专利> OXIDE SINTERED COMPACT, ITS PRODUCING METHOD, AMORPHOUS OXIDE FILM OBTAINED BY USING OXIDE SINTERED COMPACT AND LAMINATE CONTAINING AMORPHOUS OXIDE FILM

OXIDE SINTERED COMPACT, ITS PRODUCING METHOD, AMORPHOUS OXIDE FILM OBTAINED BY USING OXIDE SINTERED COMPACT AND LAMINATE CONTAINING AMORPHOUS OXIDE FILM

机译:氧化物烧结体及其制造方法,通过使用氧化物烧结体和层状包含非晶质氧化物膜获得的非晶质氧化物膜

摘要

PROBLEM TO BE SOLVED: To provide an oxide sintered compact where an oxide film having an intermediate refractive index can be formed stably and rapidly by a DC sputtering method although it is not easy to be stably formed in a conventional technique because of occurring arc discharge when the DC sputtering method is used, its producing method, an amorphous oxide film obtained by using the oxide sintered compact and a laminate containing the amorphous oxide film.;SOLUTION: The oxide sintered compact consists of mainly an oxide containing indium and silicon. The atom ratio of silicon to indium is 0.65-1.75. When the oxide sintered compact is used as a sputtering target, film forming can be performed by the DC sputtering method. The oxide sintered compact does not contain silicon dioxide and the crystalline phase of an indium silicate compound having a thortveitite-type structure is constituted as a main phase.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:提供一种氧化物烧结体,其中通过DC溅射法可以稳定而迅速地形成具有中等折射率的氧化膜,尽管由于在现有技术中由于在电弧放电时会发生电弧放电而难以稳定地形成该氧化膜使用直流溅射法,其制造方法,通过使用氧化物烧结体获得的非晶氧化物膜以及包含该非晶氧化物膜的层压体。解决方案:氧化物烧结体主要由包含铟和硅的氧化物组成。硅与铟的原子比为0.65-1.75。当使用氧化物烧结体作为溅射靶时,可以通过DC溅射法进行成膜。氧化物烧结体不含二氧化硅,以具有苏铁矿型结构的硅酸铟化合物的结晶相为主要相。COPYRIGHT:(C)2007,JPO&INPIT

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