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OXIDE SINTERED COMPACT, ITS PRODUCING METHOD, AMORPHOUS OXIDE FILM OBTAINED BY USING OXIDE SINTERED COMPACT AND LAMINATE CONTAINING AMORPHOUS OXIDE FILM
OXIDE SINTERED COMPACT, ITS PRODUCING METHOD, AMORPHOUS OXIDE FILM OBTAINED BY USING OXIDE SINTERED COMPACT AND LAMINATE CONTAINING AMORPHOUS OXIDE FILM
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机译:氧化物烧结体及其制造方法,通过使用氧化物烧结体和层状包含非晶质氧化物膜获得的非晶质氧化物膜
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摘要
PROBLEM TO BE SOLVED: To provide an oxide sintered compact where an oxide film having an intermediate refractive index can be formed stably and rapidly by a DC sputtering method although it is not easy to be stably formed in a conventional technique because of occurring arc discharge when the DC sputtering method is used, its producing method, an amorphous oxide film obtained by using the oxide sintered compact and a laminate containing the amorphous oxide film.;SOLUTION: The oxide sintered compact consists of mainly an oxide containing indium and silicon. The atom ratio of silicon to indium is 0.65-1.75. When the oxide sintered compact is used as a sputtering target, film forming can be performed by the DC sputtering method. The oxide sintered compact does not contain silicon dioxide and the crystalline phase of an indium silicate compound having a thortveitite-type structure is constituted as a main phase.;COPYRIGHT: (C)2007,JPO&INPIT
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