首页> 外国专利> INSULATING LAYER, INSULATING LAYER PATTERN, THIN FILM TRANSISTOR, LIQUID CRYSTAL DISPLAY, AND LIQUID PATTERN FORMATION DEVICE

INSULATING LAYER, INSULATING LAYER PATTERN, THIN FILM TRANSISTOR, LIQUID CRYSTAL DISPLAY, AND LIQUID PATTERN FORMATION DEVICE

机译:绝缘层,绝缘层图案,薄膜晶体管,液晶显示器和液体图案形成装置

摘要

PROBLEM TO BE SOLVED: To reduce the quantity of raw materials to be used by selectively supplying the raw materials on a substrate beforehand, and to simplify a manufacturing process by eliminating a photolithography step and an etching step.;SOLUTION: This thin film formation method for forming a silicon based semiconductor film and a silicon-oxide based insulating material film, etc. comprises the steps of: spouting liquid materials plural times in the predetermined direction by making into a drop 102, flying them, and selectively applying them on a substrate 101, to form a liquid pattern 103; solidifying the liquid pattern 103 to form it into a thin film pattern 104; and irradiating a laser beam on the thin film pattern 104 to form it into a crystallized film 106. This allows the manufacturing process to be simplified by eliminating the lithography step and the etching step, and the quantity of the material used to be reduced.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:通过预先在基板上选择性地供应原材料来减少要使用的原材料的数量,并且通过消除光刻步骤和蚀刻步骤来简化制造过程;解决方案:这种薄膜形成方法用于形成硅基半导体膜和硅氧化物基绝缘材料膜等的步骤包括以下步骤:通过使液滴102成液滴状而在预定方向上多次喷出液体材料,使其飞散,并选择性地将其涂覆在基板上。 101,形成液体图案103;固化液体图案103以使其形成薄膜图案104;通过将激光束照射到薄膜图案104上并形成结晶膜106,从而可以通过省略光刻步骤和蚀刻步骤来简化制造工艺,并减少了材料的使用量。版权:(C)2007,日本特许厅&INPIT

著录项

  • 公开/公告号JP2007142451A

    专利类型

  • 公开/公告日2007-06-07

    原文格式PDF

  • 申请/专利权人 NEC CORP;

    申请/专利号JP20070011302

  • 发明设计人 TANABE HIROSHI;

    申请日2007-01-22

  • 分类号H01L29/786;H01L21/336;B05D7/24;B05D5/12;H01L21/208;H01L21/318;H01L21/316;B05C5/00;

  • 国家 JP

  • 入库时间 2022-08-21 21:10:40

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