Production method of semiconductor accumulation memory and semiconductor accumulation memory

摘要

This invention two electrodes (10,20) the memory medium which is arranged between the semiconductor accumulation memory which it has (6) regards (1). The above-mentioned memory medium (6) for example may be phase change medium. Memory medium (6) 1st state or is set to 2nd state by electric current. As a result, it can make information item remember. According to this invention, consists of the material (4) the surface where the impurity particle which was filled (L) is provided. As a result, the programming electric current where the current density in memory medium rises locally, is needed for programming can be decreased. As a result, electric current consumption of the memory device which includes phase change medium can be decreased. Therefore, the memory device which includes phase change medium, with other part such as transistor, it is possible, to execute at the smallest structural size, it is possible to accumulate to the single semiconductor circuit, the necessity to arrange in the separate sub circuit is gone.