首页> 外国专利> METHOD FOR MANUFACTURING SILICON SUBSTRATE HAVING SUPER-CLEAN SURFACE BY LOCAL SELECTIVE CLEANING AND ITS MANUFACTURING EQUIPMENT

METHOD FOR MANUFACTURING SILICON SUBSTRATE HAVING SUPER-CLEAN SURFACE BY LOCAL SELECTIVE CLEANING AND ITS MANUFACTURING EQUIPMENT

机译:通过局部选择性清洁制造具有超清洁表面的硅基质的方法及其制造设备

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon substrate having a super-clean surface in which, when a silicon wafer is treated, a repetitive cleaning is abolished by applying a local selective cleaning.;SOLUTION: The method for manufacturing the silicon substrate by the local selective cleaning is a method for removing a surface impurity from a surface of a member to be treated. The method comprises the series of steps of (a) feeding a material having at least one impurity particle to the surface, (b) supplying a liquid to the surface of the material near at least one impurity particle, and (c) evaporating the liquid instantly to remove the impurity particle as a part of the liquid to be evaporated. Also, the manufacturing equipment using the same is provided. Laser heating is used for instant evaporation, and chucking can be performed near the surface particles so as to promote a removal of the surface particles detected in the evaporation step.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:提供一种制造具有超净表面的硅衬底的方法,其中,当处理硅晶片时,通过局部局部清洗来消除重复清洗。通过局部选择性清洗的硅衬底是用于从待处理部件的表面去除表面杂质的方法。该方法包括一系列步骤:(a)将具有至少一个杂质颗粒的材料供给到表面;(b)在至少一个杂质颗粒附近将液体供给到材料的表面;以及(c)蒸发液体立即去除杂质颗粒,将其作为蒸发液体的一部分。另外,提供了使用该制造设备的制造设备。激光加热用于瞬时蒸发,并且可以在表面颗粒附近进行吸盘,以促进去除在蒸发步骤中检测到的表面颗粒。;版权所有:(C)2007,JPO&INPIT

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