III family nitride electronic device structure which possesses the high Al content AlGaN spread barrier

摘要

In order that movement of the dopant to inside the active region is controlled from the dope conversion material, the particular barrier material includes high Al content Al _{XGa yN the} dope conversion material which is constituted, in the active region, and III family nitride electronic device structure which includes the barrier material, here, it is x+y=1 and x0.50. In the feature of specification, thickness approximately as portable of 5 - approximately 200 angstroms/spread barrier layer using AlN, for example the magnesium to inside the active region of III family nitride electronic device such as UV-LED photoelectron element and/or influx of the silicon dopant material is controlled.