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While the substrate marginal central processing unit and the substrate marginal

机译:而基板边缘中央处理单元和基板边缘

摘要

PROBLEM TO BE SOLVED: To provide an apparatus and a method for treating the peripheral edge of a substrate capable of suppressing metal contamination of an end face of the substrate.;SOLUTION: The apparatus for treating the peripheral edge of the substrate comprises an etching nozzle 21, a pure water nozzle 22 and a gas nozzle 23 disposed above the peripheral edge of a wafer W which is held by a vacuum chuck 10. The nozzles 21, 22 and 23 are rotatably moved by a turning drive mechanism 27. Thus, an etchant supply position P1 can be changed within a non-device forming region of the peripheral edge of the wafer W. Further, a pure water supply position P2 can be changed within the non-device forming region of the peripheral edge of the wafer W from a device-forming region in the wafer W.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:提供一种用于处理能够抑制基板的端面的金属污染的基板的外围边缘的设备和方法;解决方案:用于处理基板的外围边缘的设备包括蚀刻喷嘴如图21所示,纯水喷嘴22和气体喷嘴23设置在由真空吸盘10保持的晶片W的周缘上方。喷嘴21、22和23通过旋转驱动机构27可旋转地移动。可以在晶片W的外围边缘的非器件形成区域内改变蚀刻剂供给位置P1。此外,可以从晶片W的外围边缘的非器件形成区域内改变纯水供给位置P2。晶圆W中的器件形成区域。;版权所有:(C)2003,日本特许厅

著录项

  • 公开/公告号JP3990127B2

    专利类型

  • 公开/公告日2007-10-10

    原文格式PDF

  • 申请/专利权人 大日本スクリーン製造株式会社;

    申请/专利号JP20010277755

  • 发明设计人 田中 哲哉;

    申请日2001-09-13

  • 分类号H01L21/306;

  • 国家 JP

  • 入库时间 2022-08-21 21:09:14

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