It soaks furthermore after pure water rinse and the drying, it detects

摘要

PROBLEM TO BE SOLVED: To accurately and quickly evaluate the presence of metal contamination in a silicon wafer heat-treated in hydrogen and a boat and tube for heat- treating in hydrogen. ;SOLUTION: A silicon wafer is heat-treated under the prescribed conditions in a non-oxidative atmosphere including hydrogen gas (1), soaked in hydrofluoric acid (2), soaked in SC-1 cleaning liquid (4), and etch pits on a surface of the silicon wafer are detected by an optical particle measuring instrument (7). A metal contamination source is specified by the distribution pattern of high density etch pits of the wafer (9). If the high density etch pits are detected in a part of the wafer contacted with a boat for heat-treating, the wafer and the boat for heat-treating are judged to be metal-contaminated. If the high density etch pits detected on the wafer form a ring or arc, the wafer and the tube for heat-treating are judged to be metal-contaminated.;COPYRIGHT: (C)1999,JPO