And a storage capacitor of the ferroelectric material, a method for forming a protective layer against penetration of hydrogen into the storage capacitor in

摘要

The method involves applying at least one raised auxiliary structure of auxiliary material to cover part of the substrate surface, applying the coating to be opened to the auxiliary structure to cover a related surface area of the substrate and auxiliary structure and removing coating material and if appropriate other material by essentially planar etching until the coating on the auxiliary structure is opened and the auxiliary material exposed. The method involves applying at least one raised auxiliary structure (11) of auxiliary material (13) on a substrate (1,5,7,9), if appropriate containing structures, so that it covers part of the substrate surface, applying the coating (15) to be opened to the auxiliary structure so that it covers a related surface area of the substrate and auxiliary structure and removing coating material and if appropriate other material on the surface by essentially planar etching until the coating on the auxiliary structure is opened and the auxiliary material exposed.