Being production manner of the nitriding gallium monocrystal which grows the monocrystal by crystallizing evaporation ones which are obtained from the raw materials

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride single crystal, by which the decomposition of gallium nitride can be suppressed in a sublimation method, and the production efficiency is improved.;SOLUTION: In the method for manufacturing the gallium nitride single crystal, comprising growing the gallium nitride single crystal on the surface of a substrate 3 by feeding a raw material (GaN powder) 2 of the gallium nitride (GaN) single crystal in a crucible 1, then heating the crucible so as to sublimate or evaporate the raw material, and utilizing that the sublimated or evaporated raw material recrystallizes when the temperature is again lowered on the surface of the substrate 3, the growth of the single crystal is performed under pressure. Preferable pressure is ≥5 atm (5×1.013×10⁵ Pa). Preferably, the growth of the single crystal is performed in the atmosphere of a mixed gas of gaseous NH₃ and N₂.;COPYRIGHT: (C)2005,JPO&NCIPI