首页> 外国专利> Niobium, liquid double alkoxide and its manufacturing method of a tantalum and lithium as well as the preparation of complex oxide dielectric thin film using the same

Niobium, liquid double alkoxide and its manufacturing method of a tantalum and lithium as well as the preparation of complex oxide dielectric thin film using the same

机译:铌,液态双醇盐及其钽,锂的制造方法以及使用其制备复合氧化物介电薄膜的方法

摘要

PROBLEM TO BE SOLVED: To provide a new double alkoxide of niobium, tantalum and lithium hard to be thermal-dissociated, being in a leg. at room temp. and having the properties of beihng capable of distillation, to provide a method for producing it and to provide a method for producing a multiple oxide dielectric thin film using the compd. ;SOLUTION: This new compd. LiM(OC2H5)4(OC2H4OCH3)2 (M is Nb orTa) is a liq. at room temp., is hard to thermal-dissociated and has the vapor pressure of about 0.3 Torr at 190°C. The compd. can be produced by bringing Li(OC2H4 OCH3) into reaction with M(OC2H5)4(OC2H4OCH3) and next distillating and recovering the same. By using the compd. as the raw material for a CVD method, an LiNbO3 thin film and an LiTaO3 thin film for optical elements can be produced.;COPYRIGHT: (C)2001,JPO
机译:要解决的问题:提供一种新的铌,钽和锂的双烷氧基化合物,难于热分解。在室温下并具有能够蒸馏的性质,提供了一种制备方法,并提供了使用所述混合物制备多氧化物介电薄膜的方法。 ;解决方案:此新版本。 LiM(OC 2 H 5)4(OC 2 H 4 OCH 3)2(M为Nb或Ta)为液体。在室温下,其难以热解,并且在190℃下具有约0.3Torr的蒸气压。该compd。可以通过使Li(OC2H4OCH3)与M(OC2H5)4(OC2H4OCH3)反应,然后蒸馏并回收来制备。通过使用compd。作为CVD法的原料,可以制造光学元件用的LiNbO 3薄膜和LiTaO 3薄膜。版权所有:(C)2001,日本特许厅

著录项

  • 公开/公告号JP3858138B2

    专利类型

  • 公开/公告日2006-12-13

    原文格式PDF

  • 申请/专利权人 株式会社高純度化学研究所;

    申请/专利号JP19990256105

  • 发明设计人 門倉 秀公;奥原 弓恵;

    申请日1999-08-06

  • 分类号C07C43/13;C07C31/28;C23C16/40;C07F9/00;C07F19/00;

  • 国家 JP

  • 入库时间 2022-08-21 21:08:03

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