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Being layout wiring manner of the standard electrolysis cell or the semiconductor integrated circuit, and its layout

机译:是标准电解槽或半导体集成电路的布局布线方式及其布局

摘要

PROBLEM TO BE SOLVED: To provide a functional standard cell including a bypass capacitor, which has small residual inductance and provides an enough capacity without enlarging an area for eliminating power supply noise of a high frequency element, and a semiconductor integrated circuit having it, and its arrangement wiring method.;SOLUTION: A standard cell with a multilayer wiring layer has a semiconductor substrate, wherein at least one functional circuit element comprising input and output signal terminals is formed, a signal wiring layer, which is formed above a semiconductor substrate and composed of at least one layer for wiring input and output signal terminals and a three-terminal capacitor formed above a signal wiring layer. The three-terminal capacitor has a power supply wiring layer and first and second ground wiring layers holding a power supply wiring layer between via an insulation layer. A functional circuit element receives power from the power supply wiring layer and a first ground wiring layer.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:提供一种功能标准单元,包括旁路电容器,其具有较小的残留电感并且提供足够的容量而不增大用于消除高频元件的电源噪声的面积;以及具有该标准单元的半导体集成电路,以及解决方案:具有多层布线层的标准单元具有半导体衬底,其中形成至少一个包括输入和输出信号端子的功能电路元件,信号布线层,该信号电路层形成在半导体衬底上方,并且包括至少一个用于连接输入和输出信号端子的层和一个形成在信号布线层上方的三端电容器。三端子电容器具有电源布线层以及在绝缘层之间保持电源布线层的第一和第二接地布线层。功能电路元件从电源布线层和第一接地布线层接收电力。;版权所有:(C)2003,JPO

著录项

  • 公开/公告号JP3924471B2

    专利类型

  • 公开/公告日2007-06-06

    原文格式PDF

  • 申请/专利权人 株式会社リコー;

    申请/专利号JP20020021833

  • 发明设计人 吉岡 圭一;市宮 淳次;

    申请日2002-01-30

  • 分类号H01L21/822;H01L27/04;H01L21/82;

  • 国家 JP

  • 入库时间 2022-08-21 21:08:02

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