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With the excited light which radiation is done from the excitation light source and

机译:利用激发光,该激发光从激发光源发出,并且

摘要

PROBLEM TO BE SOLVED: To produce a low noise stabilized output by employing titanium as a material being arranged at the interface between a semiconductor layer and an electrode located closely to an active layer emitting light. ;SOLUTION: The semiconductor laser 2 is a refractive index waveguide type semiconductor laser having a wide oscillation region comprising an n-GaAs butter layer 22, an n-AlGaAs clad layer 23, an undoped active layer 24, and a partially mesa type p-AlGaAs clad layer 25 formed sequentially on an n-GaAs substrate 21. A p-GaAs cap layer 26 is formed on the upper surface of the mesa part and an insulation layer, i.e., an SiO2 layer 27 is formed on the opposite sides the mesa part. Furthermore, a p-side electrode 28 of Ti/Pi/Au is arranged on the cap layer 26 and an n-side electrode 29 of AuGe/Ni/Au is arranged on the backside of the n-GaAs substrate 21. The p-side electrode 28 is formed by depositing Ti, Pt and Au sequentially from the side touching a semiconductor layer (cap layer 26).;COPYRIGHT: (C)1999,JPO
机译:要解决的问题:通过采用钛作为一种材料来产生低噪声稳定的输出,该材料被布置在半导体层和紧靠发光有源层的电极之间的界面处。 ;解决方案:半导体激光器2是具有宽振荡区域的折射率波导型半导体激光器,包括n-GaAs黄油层22,n-AlGaAs覆盖层23,未掺杂有源层24和部分台面型p-在n-GaAs衬底21上顺序形成的AlGaAs覆盖层25。在台面部分和绝缘层即SiO 2 层27的上表面上形成p-GaAs覆盖层26。形成在台面部分的相对两侧。此外,Ti / Pi / Au的p侧电极28布置在覆盖层26上,AuGe / Ni / Au的n侧电极29布置在n-GaAs衬底21的背面上。侧面电极28是通过从接触半导体层(盖层26)的一侧依次沉积Ti,Pt和Au形成的。版权所有:(C)1999,JPO

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