Repeating the second oxide formation of perovskite structure to first oxide formation of the perovskite structure which

摘要

PURPOSE: To provide a manufacturing method of an oxide element which contains a process for adjusting the conductivity of the surface layer of an oxide layer, regarding the manufacturing method of an oxide element wherein an oxide layer of perovskite structure is made to serve as a carrier transit region. ;CONSTITUTION: A process for superposing and forming a second oxide layer 12 of perovskite structure on a first oxide layer 11 of perovskite structure which is turned into a base is performed. By heat treatment, at least one out of the following is performed; mutual difusion of bivalent or trivalent elements constituting the first oxide layer and bivalent or trivalent elements constituting the second oxide layer 12, and mutual diffusion of 3d transition metal elements constituting the first oxide layer 11 and 3d transition metal elements constituting the second oxide layer 12. Thereby a process for forming a third oxide layer 13 on the surface layer or the surface of the first oxide layer 11 is contained. The conductivity of the third oxide layer 13 is different from that of the first oxide layer 11 and that of the second oxide film 12.;COPYRIGHT: (C)1996,JPO