首页> 外国专利> Following to the inside and outside surface discriminatory conversion mannered null lapping process of the silicon wafer which uses the etching manner and this manner of the silicon wafer which uses alkaline

Following to the inside and outside surface discriminatory conversion mannered null lapping process of the silicon wafer which uses the etching manner and this manner of the silicon wafer which uses alkaline

机译:跟随内外表面的区别性转换,采用蚀刻方式的硅晶片和采用碱性的硅晶片的这种方式的零研磨工艺

摘要

PROBLEM TO BE SOLVED: To provide alkali etching liquid which can provide a large shape of a facet and can control the formation of a deep pit, a method for etching a silicon wafer to provide the excellent flatness and small roughness of the rear surface of the wafer of which the front surface is polished as a mirror surface, and also provide a method for discriminating the front and rear surfaces of the silicon wafer which enables the visual recognition of the front and rear surfaces of the wafer having high precision flatness and small surface roughness.;SOLUTION: The alkali etching liquid can be obtained by mixing lithium ions into a alkali aqueous solution which is mainly composed of sodium hydroxide or potassium hydroxide.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:为了提供一种碱蚀刻液,该碱蚀刻液可以提供较大的刻面形状并可以控制深坑的形成,一种用于蚀刻硅晶片以提供优异的平坦度和较小的后表面粗糙度的方法。晶片的前表面被抛光成镜面,并且还提供了一种辨别硅晶片的前表面和后表面的方法,该方法能够视觉识别具有高精度平坦度和小表面的晶片的前表面和后表面溶液:可以通过将锂离子混合到主要由氢氧化钠或氢氧化钾组成的碱性水溶液中来获得碱性蚀刻液。版权所有:(C)2003,JPO

著录项

  • 公开/公告号JP3890981B2

    专利类型

  • 公开/公告日2007-03-07

    原文格式PDF

  • 申请/专利权人 株式会社SUMCO;

    申请/专利号JP20020000552

  • 发明设计人 高石 和成;則本 雅史;

    申请日2002-01-07

  • 分类号H01L21/306;

  • 国家 JP

  • 入库时间 2022-08-21 21:07:31

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