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Double-diffused-drain MOS device with floating non-insulator spacer
Double-diffused-drain MOS device with floating non-insulator spacer
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机译:具有浮动非绝缘隔离层的双扩散漏极MOS器件
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摘要
A double-diffused-drain metal-oxide-semiconductor device has a gate structure overlying a semiconductor substrate, a pair of insulator spacers on the sidewalls of the gate structure respectively, and a pair of floating non-insulator spacers embedded in the pair of insulator spacers respectively.
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