首页>
外国专利>
Charge trapping device and method of producing the charge trapping device
Charge trapping device and method of producing the charge trapping device
展开▼
机译:电荷俘获装置及制造该电荷俘获装置的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A charge-trapping device includes a field effect transistor, which has source and drain regions. The source and drain regions have a dopant concentration profile, which has a gradient each in a vertical and a lateral direction with respect to a surface of a semiconductor substrate. The gradient in the lateral direction towards a depletion region of the transistor is larger than the gradient in the vertical direction towards a well region.
展开▼