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DUAL METAL INTEGRATION SCHEME BASED ON FULL SILICIDATION OF THE GATE ELECTRODE
DUAL METAL INTEGRATION SCHEME BASED ON FULL SILICIDATION OF THE GATE ELECTRODE
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机译:基于门电极全硅化的双金属集成方案
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摘要
An integration scheme that enables full silicidation (FUSI) of the nFET and pFET gate electrodes at the same time as that of the source/drain regions is provided. The FUSI of the gate electrodes eliminates the gate depletion problem that is observed with polysilicon gate electrodes. In addition, the inventive integration scheme creates different silicon thicknesses of the gate electrode just prior to silicidation. This feature of the present invention allows for fabricating nFETs and pFETs that have a band edge workfunction that is tailored for the specific device region.
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