首页>
外国专利>
Mask CD correction based on global pattern density
Mask CD correction based on global pattern density
展开▼
机译:基于整体图案密度的掩模CD校正
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present disclosure provide a method of forming a photomask layout. In one example, the method comprises selecting a pattern feature on the photomask layout, defining a global area centered at the pattern feature on the photomask layout, calculating a pattern density inside the global area, and correcting the pattern feature based on the pattern density and patterning process data.
展开▼