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SET and SEGR resistant delay cell and delay line for Power-On Reset circuit applications

机译:耐SET和SEGR延迟单元和延迟线,适用于上电复位电路应用

摘要

A delay line appropriate for use in a POR circuit or other integrated circuit in a space environment combines three separate circuit techniques to improve performance without unnecessarily increasing circuit area or adding to manufacturing costs when compared to a simple inverter delay line. The delay line of the present invention uses the selective placement of capacitors throughout the delay line, one-sided current starving, and the incorporation of one-sided Schmitt trigger circuits. Performance of the delay line is substantially immune to SEGR events (“Single Event Gate Rupture”) and SET events (“Single Event Transients”). Spurious signals produced by SEGR and SET events are quickly and substantially attenuated.
机译:与简单的反相器延迟线相比,适合在空间环境中的POR电路或其他集成电路中使用的延迟线结合了三种独立的电路技术,以提高性能而不会不必要地增加电路面积或增加制造成本。本发明的延迟线在整个延迟线上使用电容器的选择性放置,单侧电流不足以及单侧施密特触发电路的结合。延迟线的性能基本上不受SEGR事件(“单事件门破裂”)和SET事件(“单事件瞬态”)的影响。由SEGR和SET事件产生的杂散信号会迅速且显着衰减。

著录项

  • 公开/公告号US2007182474A1

    专利类型

  • 公开/公告日2007-08-09

    原文格式PDF

  • 申请/专利权人 MATTHEW VON THUN;

    申请/专利号US20060347903

  • 发明设计人 MATTHEW VON THUN;

    申请日2006-02-06

  • 分类号H03H11/26;

  • 国家 US

  • 入库时间 2022-08-21 21:03:47

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