Buried photodiode for image sensor with shallow trench isolation technology

摘要

A buried photodiode with shallow trench isolation technology is formed in a semiconductor substrate of a first conductive type. A trench having a bottom portion and a sidewall portion is formed in the semiconductor substrate. An isolation region is formed on the bottom portion of the trench. A gate structure covers the sidewall portion of the trench. A first doped region of a second conductive type is formed in the semiconductor substrate adjacent to the trench and the gate structure. A second doped region of the first conductive type is formed overlying the first doped region near the surface of the semiconductor substrate.