Semiconductor Devices Having Epitaxial Layers with Suppressed Lateral Growth and Related Methods of Manufacturing Such Devices

摘要

Semiconductor devices are provided having a selective epitaxial growth layer that exhibits suppressed lateral growth. These semiconductor devices may include a semiconductor substrate having a silicon region, and an epitaxial growth layer formed on the silicon region. The epitaxial growth layer may comprise alternatively stacked silicon and silicon germanium epitaxial layers. The silicon germanium epitaxial layer may be thinner than the silicon epitaxial layers.